학술논문
Properties of ITO:Zr films deposited by co-sputtering
Document Type
Author abstract
Author
Source
Optoelectronics Letters. March, 2008, Vol. 4 Issue 2, p137, 3 p.
Subject
Language
English
ISSN
1673-1905
Abstract
ITO:Zr films were deposited on glass substrate by co-sputtering with an ITO target and a Zirconium target. Substrate temperature and oxygen flow rate have important influences on the properties of ITO:Zr films. ITO:Zr films show better crystalline structure and lower surface roughness. Better optical-electrical properties of the films can be achieved at low substrate temperature. The certain oxygen flow rates worsen the electrical properties but can enhance the optical properties of ITO:Zr films. The variation in optical band gap can be explained on the basis of Burstin-Moss effect.