학술논문
Epitaxial lift-off of MBE grown II-VI heterostructures using a novel MgS release layer
Document Type
Academic Journal
Source
Journal of Crystal Growth. May 1, 2005, Vol. 278 Issue 1-4, p325, 4 p.
Subject
Language
English
ISSN
0022-0248
Abstract
To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.jcrysgro.2005.01.019 Byline: C. Bradford, A. Currran, A. Balocchi, B.C. Cavenett, K.A. Prior, R.J. Warburton Abstract: Epitaxial Lift-Off of ZnSe/ZnCdSe and MgS/ZnCdSe quantum well structures from their GaAs substrate has been achieved by using highly reactive MgS as the sacrificial layer. This technique has proved possible in II-VI semiconductor materials due to the huge contrast in the etch rates between the metastable MgS release layer and the II-VI quantum well materials. In this paper, we outline the epitaxial lift-off technique used and confirm the success of the new method using photoluminescence experiments taken before and after lift-off. Author Affiliation: School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, UK