학술논문
Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition
Document Type
Report
Author
Source
Optoelectronics, Instrumentation and Data Processing. August, 2009, Vol. 45 Issue 4, p322, 6 p.
Subject
Language
English
ISSN
8756-6990
Abstract
A combined theoretical and experimental analysis of the crystalline phase fraction in nanocrystalline films grown by low-energy plasma-enhanced chemical vapor deposition is presented. The effect of the key parameters, such as temperature, silane flux, and hydrogen dilution ratio, is analyzed. An atomic-scale Monte Carlo model is developed, where the crystallization probability depends on the local environment of the nanocrystalline film. Good agreement is found between the experiments and theory, despite the use of a single fitting parameter.