부산대학교 도서관

Undoped and Mg[sup.2+]-doped β-Ga[sub.2]O[sub.3]-20% In[sub.2]O[sub.3] solid solution microcrystalline samples were synthesized using the high-temperature solid-state chemical reaction method to investigate the influence of native defects on structural, luminescent, and electrical properties. The synthesis process involved varying the oxygen partial pressure by synthesizing samples in either an oxygen or argon atmosphere. X-ray diffraction (XRD) analysis confirmed the monoclinic structure of the samples with the lattice parameters and unit cell volume fitting well to the general trends of the (Ga[sub.1−x]In[sub.x])[sub.2]O[sub.3] solid solution series. Broad emission spectra ranging from 1.5 to 3.5 eV were registered for all samples. Luminescence spectra showed violet, blue, and green emission elementary bands. The luminescence intensity was found to vary depending on the synthesis atmosphere. An argon synthesis atmosphere leads to increasing violet luminescence and decreasing green luminescence. Intense bands at about 4.5 and 5.0 eV and a low-intensity band at 3.3 eV are presented in the excitation spectra. The electrical conductivity of the samples was also determined depending on the synthesis atmosphere. The high-resistance samples obtained in an oxygen atmosphere exhibited activation energy of around 0.98 eV. Samples synthesized in an argon atmosphere demonstrated several orders of magnitude higher conductivity with an activation energy of 0.15 eV. The results suggest that the synthesis atmosphere is crucial in determining the luminescent and electrical properties of undoped β-Ga[sub.2]O[sub.3]-In[sub.2]O[sub.3] solid solution samples, offering the potential for various optoelectronic applications.
Author(s): Andriy Luchechko (corresponding author) [1,*]; Vyacheslav Vasyltsiv [1]; Markiyan Kushlyk [1]; Vasyl Hreb [2]; Dmytro Slobodzyan [1]; Leonid Vasylechko [2]; Yaroslav Zhydachevskyy (corresponding author) [3,4,*] 1. Introduction In recent [...]