학술논문
Effects of substrate misorientation and growth rate on ordering in GalnP
Document Type
Academic Journal
Author
Source
Journal of Applied Physics. May 15, 1994, Vol. 75 Issue 10, p5135, 7 p. photograph
Subject
Language
ISSN
0021-8979
Abstract
The ordered structures observed in Ga(sub x)In sub(1-x)P layers grown on nominally (001)-oriented GaAs substrates are highly influenced by the growth rate and the angle of substrate misorientation. Antiphase boundaries (APB) spacing increases, with decrease in growth rate. Large single domains with no order twins and widely spaced APB propagation from the substrate to the top surface are caused by misorientations by 3, 6 and 9 degrees. Photoluminesence studies show that the maximum ordering occur for substrate misorientations of 4 degrees and for growth rates of 2 and 4 micrometer/hour.