부산대학교 도서관

To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.jcp.2005.08.003 Byline: M. Galler, F. Schurrer Keywords: Boltzmann-Poisson system; Multigroup approach; WENO scheme; GaAs-MESFET; Semiconductor device simulation Abstract: We propose a direct solver to the non-stationary Boltzmann-Poisson system for simulating the electron transport in two-dimensional GaAs devices. The GaAs conduction band is approximated by a two-valley model. All of the important scattering mechanisms are taken into account. Our numerical scheme consists of the combination of the multigroup approach to deal with the dependence of the electron distribution functions on the three-dimensional electron wave vectors and a high-order WENO reconstruction procedure for treating their spatial dependences. The electric field is determined self-consistently from the Poisson equation. Numerical results are presented for a GaAs-MESFET. We display electron distribution functions as well as several macroscopic quantities and compare them to those of Monte Carlo simulations. In addition, we study the influence of the used discretization on the obtained results. Author Affiliation: Institute of Theoretical and Computational Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz, Austria Article History: Received 15 February 2005; Revised 24 June 2005; Accepted 5 August 2005