학술논문

Effect of the concentration of uncompensated impurities on the properties of CdTe-based X- and γ-ray detectors
Document Type
Author abstract
Source
Semiconductors. March 1, 2012, Vol. 46 Issue 3, p374, 8 p.
Subject
Nuclear radiation -- Analysis -- Electric properties
Detectors -- Analysis -- Electric properties
Gamma rays -- Analysis -- Electric properties
Language
English
ISSN
1063-7826
Abstract
Measurements of the [sup.55]Fe-isotope emission spectra and the photosensitivity of CdTe detectors with a Schottky diode, and also the temperature dependence of the resistivity of a CdTe crystal ((2-3) x [10.sup.9] ω cm at 300 K) have been used to determine the concentration of uncompensated donors (1-3) x [10.sup.12] [cm.sup.-3]. Similar measurements performed for [Cd.sub.0.9][Zn.sub.0.1]Te crystals with the resistivity (3-5) x [10.sup.10] ω cm at 300 K have shown that the concentration of uncompensated donors in this case is lower by approximately four orders of magnitude. The results of calculations show that, due to such a significant decrease in the concentration of uncompensated donors, the efficiency of X- and y-ray radiation detection in the photon energy range 59 to 662 keV can decrease by one-three orders of magnitude (depending on the photon energy and the lifetime of charge carriers in the space-charge region). The results obtained account for the apparent poor detecting properties of the [Cd.sub.0.9][Zn.sub.0.1]Te detectors. DOI: 10.1134/S1063782612030153
1. INTRODUCTION As is known, high resistivity and a long charge-carrier lifetime are necessary conditions for the efficient operation of X- and γ-ray radiation (in what follows, X/γ-radiation) detectors based [...]