부산대학교 도서관

To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.solmat.2006.02.027 Byline: L.A. Kosyachenko, E.V. Grushko, V.V. Motushchuk Keywords: Photovoltaic devices; Charge collection; Surface recombination; Recombination losses Abstract: The losses accompanying the photoelectric energy conversion in thin-film CdS/CdTe devices faricated on the SnO.sub.2/glass substrates are analyzed. The extent to which the incomplete collection of the photogenerated carriers is determined by recombination at the CdS/CdTe interface and in the depletion layer is shown. The former is investigated based on the continuity equation with account made for surface recombination and the latter -- from the Hecht equation. A comparison of the computed results and the experimental data shows that, in general, both types of recombination losses are essential but can be practically eliminated with a choice of appropriate barrier structure and material parameters, primarily of the carrier lifetime and the concentration of uncompensated impurities. Author Affiliation: Chernivtsi National University, Kotsyubinsky Str. 2, 58012 Chernivtsi, Ukraine