부산대학교 도서관

To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2008.11.012 Byline: L.A. Kosyachenko, A.I. Savchuk, E.V. Grushko Keywords: Solar cells; CdTe; Efficiency Abstract: Dependences of the open-circuit voltage, short-circuit current, fill factor, and efficiency of a CdS/CdTe solar cell on the resistivity and thickness of the p-CdTe absorber layer, the noncompensated acceptor concentration N.sub.a-N.sub.d, and carrier lifetime I in CdTe, are investigated, and optimization of these parameters in order to improve the solar cell efficiency is performed. It has been shown that the observed low efficiency of CdS/CdTe solar cells is caused by the too short electron lifetime in the range of 10.sup.-10-10.sup.-9 s and too thin (3-5 A[micro]m) CdTe layer currently used for fabrication of CdTe/CdS solar cells. To achieve an efficiency of 28-30%, the resistivity and thickness of the CdTe absorber layer, the noncompensated acceptor concentration, and carrier lifetime should be [approximately equal to]0.1 I[c]*cm, [greater than or equal to]20-30 A[micro]m, [greater than or equal to]10.sup.16 cm.sup.-3, and [greater than or equal to]10.sup.-6 s, respectively. Author Affiliation: Chernivtsi National University, Kotsyubinsky Str. 2, Chernivtsi 58012, Ukraine