학술논문
Buckling suppression of SiGe islands on complaint substrates
Document Type
Academic Journal
Author
Source
Journal of Applied Physics. Nov 15, 2003, Vol. 94 Issue 10, p6875, 8 p.
Subject
Language
English
ISSN
0021-8979
Abstract
A cap layer was used to suppress buckling during the relaxation of compressively strained 30 nm Si0.7Ge0.3 islands on borophosphorosilicate glass. Large, fully relaxed, smooth SiGe islands obtained using cap layers indicate that this approach could be of potential use for electronic device applications.