학술논문
Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-kappa tunneling and control oxides: device fabrication and electrical performance
Document Type
Academic Journal
Author
Source
IEEE Transactions on Electron Devices. Nov, 2004, Vol. 51 Issue 11, p1840, 9 p.
Subject
Language
English
ISSN
0018-9383
Abstract
An industry compatible complementary metal-oxide-semiconductor (CMOS) process is used to successfully integrate Ge-NC and HfAlO in a Flash memory device. The results show that Ge-NC has superior thermal stability in HfA1O high-kappa dielectric.