학술논문
Gate-induced drain leakage current enhanced by plasma charging damage
Document Type
Academic Journal
Author
Source
IEEE Transactions on Electron Devices. May, 2001, Vol. 48 Issue 5, p1006, 3 p.
Subject
Language
ISSN
0018-9383
Abstract
The p-MOSFETS IGIDL were studied to determine the correlation between gate-induced leakage current, IGIDL and plasma charging damage.