학술논문
Ferromagnetic semiconductors based upon AlGaP
Document Type
Academic Journal
Author
Source
Journal of Applied Physics. May 15, 2003, Vol. 93 Issue 10, p7861
Subject
Language
English
ISSN
0021-8979
Abstract
The magnetic and structural properties of Mn and Cr-implanted AlGaP, as a function of the transition metal concentration, are reported. The use of AlGaP rather than GaP as the host semiconductor did not lead to a major increase in ferromagnetic ordering temperature for either transition metal dopant.