학술논문
18MeV electron irradiation-induced metastability in hydrogenated amorphous silicon
Document Type
Academic Journal
Author
Source
Nuclear Instruments and Methods in Physics Research, B. Oct, 2005, Vol. 239 Issue 4, p370, 5 p.
Subject
Language
English
ISSN
0168-583X
Abstract
To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.nimb.2005.05.044 Byline: P. Danesh, B. Pantchev, E. Vlaikova Keywords: Amorphous silicon; Electron irradiation; Metastability Abstract: Effect of high energy electron irradiation on hydrogenated amorphous silicon (a-Si:H) has been studied. The electron beam with an energy of 18MeV and fluence in the range of 10.sup.14-10.sup.15 cm.sup.-2 has been used. The degree of degradation and recovery of the material has been estimated using photoconductivity measurements. A saturation of the irradiation-induced degradation has been observed at a level typical for light-induced degradation. Thermal annealing of the irradiated a-Si:H films has been carried out in the temperature range of 120-180[degrees]C. The time dependence of annealing obeys a stretched-exponential law. A fast and complete annealing occurs at the temperature of 180[degrees]C. It has been suggested that 18MeV electron beam-induced metastability can be accounted for by using hydrogen-related models for light-induced degradation. Author Affiliation: Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria Article History: Received 7 February 2005; Revised 14 March 2005