학술논문
Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements
Document Type
Technical report
Author
Source
IEEE Transactions on Electron Devices. August, 2008, Vol. 55 Issue 8, p1835, 6 p.
Subject
Language
English
ISSN
0018-9383
Abstract
Significant instability is observed in the threshold voltage of 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs) due to gate-bias stressing. The instability effect is shown to be consistent with electrons directly tunneling in and out of near-interfacial oxide traps, which in irradiated Si MOS is attributed to border traps.