학술논문
A 10-kV large-area 4H-SiC power DMOSFET with stable subthreshold behavior independent of temperature
Document Type
Technical report
Author
Source
IEEE Transactions on Electron Devices. August, 2008, Vol. 55 Issue 8, p1807, 9 p.
Subject
Language
English
ISSN
0018-9383
Abstract
The design and optimization of a large-area 19-kV DMOSFET are described, which have maintained a stable low-leakage normally off subthreshold characteristic when operated at