학술논문
A multicomb variance reduction scheme for Monte Carlo semiconductor simulators
Document Type
Academic Journal
Source
IEEE Transactions on Electron Devices. April, 1998, Vol. 45 Issue 4, p918, 7 p.
Subject
Language
ISSN
0018-9383
Abstract
A multicomb variance reduction technique was utilized in Monte Carlo semiconductor device simulations to determine its effectiveness in analyzing hot electron effects. The technique was implemented on metal oxide semiconductor field effect transistor simulation and its effects were analyzed. Results showed that the multicomb variance reduction method can improve the population of high energy electrons. Such a method can also provide important data in analyzing high energy distribution.