학술논문
Fabrication of large-grain polycrystalline silicon for solar cells
Document Type
Report
Author
Source
Laser Physics. Jan, 2009, Vol. 19 Issue 1, p143, 5 p.
Subject
Language
English
ISSN
1054-660X
Abstract
The rapid recrystallization of a-Si films utilizing excimer laser crystallization (ELC) is investigated. The melt duration of liquid silicon (liquid Si) is measured by in-situ time-resolved optical measurements during ELC. The grain size of crystallized poly-Si films are characterized by FE-SEM. The substrate temperature as a function of the longest melt duration of liquid Si for different Si film thicknesses are presented. In-situ timeresolved optical measurements reveal that the longest melt duration of 400-nm-thick a-Si thin films at a substrate temperature of 500 degC is 1714 ns. The diameter of the disk grain as large as 4.7 um is produced by ELC, which can be applied to solar cells with a high conversion efficiency and reliability.