학술논문
Direct extraction of FET noise models from noise figure measurements
Document Type
Abstract
Source
IEEE Transactions on Microwave Theory and Techniques. Feb, 2002, Vol. 50 Issue 2, p461, 4 p.
Subject
Language
ISSN
0018-9480
Abstract
An algorithm is presented that allows for noniterative extraction of the parameters of the Pucel and Pospieszalski FET noise models directly from noise-figure measurements. Since the goal is to minimize the number of source-pull measurements, the number of different source admittances required as a minimum to determine the model parameters reliably is investigated. It turns out that, in the case of the Pospieszalski model, 50-[ohm] measurements are sufficient, while in case of the Pucel model, three additional source impedances have to be taken into account. The results are verified by investigating MESFET and pseudomorphic high electron-mobility transistor devices. Index Terms--Equivalent circuits, MESFETs, MODFETs, noise measurement, semiconductor device modeling, semiconductor device noise.