학술논문
Experimental evaluation of microwave field-effect-transistor noise models
Document Type
Academic Journal
Author
Source
IEEE Transactions on Microwave Theory and Techniques. Feb, 1999, Vol. 47 Issue 2, p156, 8 p.
Subject
Language
ISSN
0018-9480
Abstract
A study was conducted to analyze microwave field-effect-transistor noise models used in designing monolithic-microwave integrated-circuits. The models differed in the number of independent coefficients needed to compute noise parameters. The broad frequency range included radio frequencies down to 50 MHz. Results indicated that the two-parameter Pospieszalski model was the most suitable for designing monolithic-microwave integrated circuits.