학술논문

Effective Lande factor g a- of conduction electrons in GaAs and AlSb
Document Type
Author abstract
Source
Solid State Communications. May, 2007, Vol. 142 Issue 6, p342, 4 p.
Subject
Gallium arsenide -- Analysis
Language
English
ISSN
0038-1098
Abstract
To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.ssc.2007.02.037 Byline: N. Fraj, S. Ben Radhia, K. Boujdaria Abstract: Using third and fourth order perturbation theory inside a 14-band and 30-band k a p model, we have calculated the effective Lande factor g.sup.a of I.sub.6C conduction electrons in GaAs and AlSb. A strong variation between both models is observed. We show that the 14-band formalism even in fourth order perturbation theory is not sufficient to predict an experimental data of g.sup.a. However, results deduced by the 30-band k a p model are consistent with experimental data. In particular, the k a p Hamiltonian parameters are adjusted such that the g.sup.a of GaAs and AlSb are respectively -0.391 and 0.81, in excellent agreement with the experimental values of -0.44 and 0.84. Author Affiliation: Laboratoire de Physique des Materiaux: Structures et Proprietes, Faculte des Sciences de Bizerte, Universite 7 Novembre a Carthage, 7021 Zarzouna, Bizerte, Tunisia Article History: Received 10 August 2006; Revised 14 February 2007; Accepted 26 February 2007 Article Note: (miscellaneous) by F. Peeters