학술논문
The effect of general strain on the band structure and electron mobility of silicon
Document Type
Technical report
Author
Source
IEEE Transactions on Electron Devices. Sept, 2007, Vol. 54 Issue 9, p2183, 8 p.
Subject
Language
English
ISSN
0018-9383
Abstract
The development of a model capturing the effect of general strain on the electron effective masses and band-edge energies of the lowest conduction band of silicon validated by calculating the bulk electron mobility under general strain with Monte Carlo technique is presented.