학술논문
Spatial variations of carrier and defect concentration in VGF GaAs:Si
Document Type
Report
Author
Source
Journal of Materials Science: Materials in Electronics. Dec, 2008, Vol. 19 Issue 1, p165, 6 p.
Subject
Language
English
ISSN
0957-4522
Abstract
Wafers cut from Si-doped vertical gradient freeze (VGF) GaAs crystals with silicon concentration varying from 1.5 to 3.4 x 10.sup.18 cm.sup.-3 have been investigated by low temperature photoluminescence topography. Carrier concentration maps were calculated from intensity topograms recorded on the high-energy slope of the band-to-band recombination, which depends on the carrier concentration predominantly due to band renormalization and band filling. Comparison to maps recorded on the B.sub.As-related PL band reveal a clear anti-correlation consistent with the view of B.sub.As complex formation.