학술논문
Hochauflösende Elektronenbeugung zur Heteroepitaxie von Graphen/Ir(111) und C60 /Bi(111)/Si(001) :Wachstum, Morphologie und Verspannungszustand
High resolution electron diffraction for heteroepitaxy of graphene/iris (111) and C & lt; sub & gt; 60 & lt;/sub & gt;/bi (111)/sii (001): growth, morphology and state of tension
High resolution electron diffraction for heteroepitaxy of graphene/iris (111) and C & lt; sub & gt; 60 & lt;/sub & gt;/bi (111)/sii (001): growth, morphology and state of tension
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German
Abstract
Duisburg, Essen, Universität Duisburg-Essen, Diss., 2012