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Trench filling with phosphorus-doped monocrystalline and polycrystalline silicon

Document Type

Article

Author

Lespiaux, J.; Deprat, F.; Rodrigues Goncalves, B.; Souc, J.; Leverd, F.; Juhel, M.; Mattei, J.-G.; Giroud-Garampon, C.; Roman, A.; Magis, T.; Hartmann, J.M.

Source

In Materials Science in Semiconductor Processing 15 June 2022 144

Subject

Language

ISSN

1369-8001

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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