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Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium

Document Type

Article

Author

Koffel, S.; Kaiser, R.J.; Bauer, A.J.; Amon, B.; Pichler, P.; Lorenz, J.; Frey, L.; Scheiblin, P.; Mazzocchi, V.; Barnes, J.-P.; Claverie, A.

Source

In Microelectronic Engineering 2011 88(4):458-461

Subject

Language

ISSN

0167-9317

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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