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Heavy-ion induced single event effects and latent damages in SiC power MOSFETs

Document Type

Article

Author

Martinella, C.; Natzke, P.; Alia, R.G.; Kadi, Y.; Niskanen, K.; Rossi, M.; Jaatinen, J.; Kettunen, H.; Tsibizov, A.; Grossner, U.; Javanainen, A.

Source

In Microelectronics Reliability January 2022 128

Subject

Language

ISSN

0026-2714

Online Access

Full Text (ScienceDirect 종량제) Web of Science JCR 저널정보 Scopus Find it@PNU

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