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Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

Document Type

Article

Author

Normand, P. ; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Tsoukalas, D.; Beltsios, K.; Claverie, A.; Benassayag, G.; Bonafos, C.; Carrada, M.; Cherkashin, N.; Soncini, V.; Agarwal, A.; Sohl, Ch.; Ameen, M.

Source

In Microelectronic Engineering 2003 67:629-634

Subject

Language

ISSN

0167-9317

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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