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In-situ MBE Si as passivating interlayer on GaAs for HfO 2 MOSCAP’s: effect of GaAs surface reconstruction

Document Type

Article

Author

Webb, D.J.; Fompeyrine, J.; Nakagawa, S.; Dimoulas, A.; Rossel, C.; Sousa, M.; Germann, R.; Alvarado, S.F.; Locquet, J.P.; Marchiori, C.; Siegwart, H.; Callegari, A.; Kiewra, E.; Sun, Y.; De Souza, J.; Hoffmann, N.

Source

In Microelectronic Engineering 2007 84(9):2142-2145

Subject

Language

ISSN

0167-9317

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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