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Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

Document Type

Article

Author

Tsai, W. ; Carter, R.J.; Nohira, H.; Caymax, M.; Conard, T.; Cosnier, V.; DeGendt, S.; Heyns, M.; Petry, J.; Richard, O.; Vandervorst, W.; Young, E.; Zhao, C.; Maes, J.; Tuominen, M.; Schulte, W.H.; Garfunkel, E.; Gustafsson, T.

Source

In Microelectronic Engineering 2003 65(3):259-272

Subject

Language

ISSN

0167-9317

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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