학술논문
Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals
Document Type
Article
Author
Source
In Journal of Crystal Growth 1 December 2023 623
Subject
Language
ISSN
0022-0248