학술논문
Electrical characteristics of silicon pixel detectors
Document Type
Article
Author
Gorelov, I; Gorfine, G; Hoeferkamp, M; Mata-Bruni, V; Santistevan, G; Seidel, S.C ; Ciocio, A; Einsweiler, K; Emes, J; Gilchriese, M; Joshi, A; Kleinfelder, S; Marchesini, R; McCormack, F; Milgrome, O; Palaio, N; Pengg, F; Richardson, J; Zizka, G; Ackers, M; Comes, G; Fischer, P; Keil, M; Martinez, G; Peric, I; Runolfsson, O; Stockmanns, T; Treis, J; Wermes, N; Gößling, C; Hügging, F; Klaiber-Lodewigs, J; Krasel, O; Wüstenfeld, J; Wunstorf, R; Barberis, D; Beccherle, R; Caso, C; Cervetto, M; Darbo, G; Gagliardi, G; Gemme, C; Morettini, P; Netchaeva, P; Osculati, B; Rossi, L; Charles, E; Fasching, D; Blanquart, L; Breugnon, P; Calvet, D; Clemens, J.-C; Delpierre, P; Hallewell, G; Laugier, D; Mouthuy, T; Rozanov, A; Valin, I; Andreazza, A; Caccia, M; Citterio, M; Lari, T; Meroni, C; Ragusa, F; Troncon, C; Vegni, G; Lutz, G; Richter, R.H; Rohe, T; Boyd, G.R; Skubic, P.L; Šı́cho, P; Tomasek, L; Vrba, V; Holder, M; Ziolkowski, M; Cauz, D; Cobal-Grassmann, M; D’Auria, S; De Lotto, B; del Papa, C; Grassmann, H; Santi, L; Becks, K.H; Lenzen, G; Linder, C
Source
In Nuclear Inst. and Methods in Physics Research, A 2002 489(1):202-217
Subject
Language
ISSN
0168-9002