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Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3

Document Type

Article

Author

Azzaz, M.; Benoist, A.; Vianello, E.; Garbin, D.; Jalaguier, E.; Cagli, C.; Charpin, C.; Bernasconi, S.; Jeannot, S.; Dewolf, T.; Audoit, G.; Guedj, C.; Denorme, S.; Candelier, P.; Fenouillet-Beranger, C.; Perniola, L.

Source

In Solid State Electronics November 2016 125:182-188

Subject

Language

ISSN

0038-1101

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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