학술논문
Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths
Document Type
Article
Author
Source
In: ACS Applied Materials and Interfaces . (ACS Applied Materials and Interfaces, 13 July 2022, 14(27):31010-31023)
Subject
Language
English
ISSN
19448252
19448244
19448244