학술논문
Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition
Document Type
Article
Author
Source
In: Journal of Vacuum Science and Technology B . (Journal of Vacuum Science and Technology B, 1 July 2022, 40(4))
Subject
Language
English
ISSN
21662754
21662746
21662746