학술논문
Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si
Document Type
Article
Source
In: Physical Review B - Condensed Matter and Materials Physics . (Physical Review B - Condensed Matter and Materials Physics, 15 June 2002, 65(23):2332071-2332074)
Subject
Language
English
ISSN
01631829