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Ambipolar performance improvement of the C-shaped pocket TFET with dual metal gate and gate-drain underlap

Document Type

Article

Author

Zhao, Z.-M.; Chen, Z.-X.; Liu, W.-J.; Tang, N.-Y.; Liu, J.-N.; Liu, X.-T.; Li, X.-L.; Pan, X.-F.; Tang, M.; Li, Q.-H.; Bai, W.; Tang, X.-D.

Source

In: Chinese Physics B. (Chinese Physics B, 1 October 2023, 32(10))

Subject

Language

English

ISSN

20583834
16741056

Online Access

Full Text (IOP Science) Full Text (CAJ - Wanfang) Full Text (IOP) Web of Science JCR 저널정보 Scopus Find it@PNU

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