학술논문
Fabrication of Ultrasmall Si Encapsulated in Silicon Dioxide and Silicon Nitride as Alternative to Impurity Doping
Document Type
Article
Author
Source
In: Physica Status Solidi (A) Applications and Materials Science . (Physica Status Solidi (A) Applications and Materials Science, July 2023, 220(13))
Subject
Language
English
ISSN
18626319
18626300
18626300