학술논문
Erratum: Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface (Applied Physics Express (2018) 11 (031002) DOI: 10.7567/APEX.11.031002)
Document Type
Erratum
Author
Source
In: Applied Physics Express . (Applied Physics Express, June 2018, 11(6))
Subject
Language
English
ISSN
18820786
18820778
18820778