학술논문
Heavily Doped n++ GaN Cap Layer AlN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor
Document Type
Article
Author
Source
In: International Journal of Nanoelectronics and Materials . (International Journal of Nanoelectronics and Materials, December 2021, 14 Special Issue InCAPE:45-51)
Subject
Language
English
ISSN
22321535
19855761
19855761