학술논문
Trap states in amorphous In-Sn-Zn-O thin-film transistors analyzed using dependence on channel thickness
Document Type
Article
Author
Source
In: Digest of Technical Papers - SID International Symposium . (Digest of Technical Papers - SID International Symposium, June 2013, 44(1):1014-1017)
Subject
Language
English
ISSN
21680159
0097966X
0097966X