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The deterioration phenomenon of amorphous InSnZnO transistors derived from the process of annealing

Document Type

Article

Author

Tomai, S.; Hayasaka, H.; Sunagawa, M.; Kawashima, E.; Ishii, S.; Nishimura, M.; Kasami, M.; Yano, K.; Wang, D.; Furuta, M.

Source

In: ECS Solid State Letters. (ECS Solid State Letters, 2013, 2(12):P107-P109)

Subject

Language

English

ISSN

21628742
21628750

Online Access

Full Text (IOP) Open Access (EBSCO) Scopus Find it@PNU

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