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High performance top-gated multilayer WSe2 field effect transistors

Document Type

Article

Author

Pudasaini, P.R.; Stanford, M.G.; Wong, A.T.; Hoffman, A.N.; Mandrus, D.G.; Rack, P.D.; Oyedele, A.; Briggs, D.P.; Xiao, K.; Ward, T.Z.

Source

In: Nanotechnology. (Nanotechnology, 31 October 2017, 28(47))

Subject

Language

English

ISSN

13616528
09574484

Online Access

Full Text (IOP Science) Full Text (IOP) Web of Science JCR 저널정보 Scopus Find it@PNU

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