학술논문
Time-resolved photoluminescence of Inx Ga1-x N/GaN multiple quantum well structures: Effect of Si doping in the barriers
Document Type
Article
Author
Source
In: Physical Review B - Condensed Matter and Materials Physics . (Physical Review B - Condensed Matter and Materials Physics, 15 December 2001, 64(24):2453391-2453397)
Subject
Language
English
ISSN
01631829