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Fabrication and characterization of heavily doped n-type GaAs for mid-infrared plasmonics

Document Type

Article

Author

Duan, J.; Li, R.; Wang, M.; Helm, M.; Zhou, S.; Prucnal, S.; Liedke, M.O.; Butterling, M.; Hirschmann, E.; Wagner, A.; Dawidowski, W.; Young, L.B.; Lin, Y.G.; Hong, M.

Source

In: Journal of Applied Physics. (Journal of Applied Physics, 7 September 2023, 134(9))

Subject

Language

English

ISSN

10897550
00218979

Online Access

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

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