학술논문

Fabrication of SiO2/SiOx/SiOxNy non-volatile memory with transparent amorphous indium gallium zinc oxide channels
Document Type
Article
Source
In: Journal of the Electrochemical Society. (Journal of the Electrochemical Society, 2011, 158(10):H1077-H1083)
Subject
Language
English
ISSN
00134651