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Intermixing and chemical structure at the interface between n-GaN and V-based contacts

Document Type

Article

Author

Pookpanratana, S.; Bär, M.; Weinhardt, L.; Heske, C.; France, R.; Moustakas, T.D.; Fuchs, O.; Blum, M.; Yang, W.; Denlinger, J.D.

Source

In: Applied Physics Letters. (Applied Physics Letters, 2008, 93(17))

Subject

Language

English

ISSN

00036951

Online Access

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

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