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Defect identification in GaAs grown at low temperatures by positron annihilation

Document Type

Article

Author

Gebauer, J.; Börner, F.; Krause-Rehberg, R.; Staab, T.E.M.; Bauer-Kugelmann, W.; Kögel, G.; Triftshäuser, W.; Specht, P.; Lutz, R.C.; Weber, E.R.; Luysberg, M.

Source

In: Journal of Applied Physics. (Journal of Applied Physics, 15 June 2000, 87(12):8368-8379)

Subject

Language

English

ISSN

00218979

Online Access

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

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