학술논문
Demonstration of a Free-layer Developed with Atomistic Simulations Enabling BEOL Compatible VCMA-MRAM with a Coefficient =100fJ/Vm
Document Type
Conference Paper
Author
Source
In: Technical Digest - International Electron Devices Meeting, IEDM , 2021 IEEE International Electron Devices Meeting, IEDM 2021. (Technical Digest - International Electron Devices Meeting, IEDM, 2021, 2021-December:17.6.1-17.6.4)
Subject
Language
English
ISSN
01631918