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Charge-pumping characterization of interface traps in Al2 O 3 / In0.75 Ga0.25 As metal-oxide-semiconductor field-effect transistors

Document Type

Article

Author

Wang, W.; Deng, J.; Hwang, J.C.M.; Xuan, Y.; Wu, Y.; Ye, P.D.

Source

In: Applied Physics Letters. (Applied Physics Letters, 2010, 96(7))

Subject

Language

English

ISSN

00036951

Online Access

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

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